| ： | GC120N65QF |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Goford Semiconductor |
| ： | MOSFET N-CH 650 |
| ： | - |
| ： | Tube |
| ： | 30 |
| ： | 1 |
1
$6.5200
$6.5200
10
$5.5900
$55.9000
100
$4.6600
$466.0000
500
$4.1100
$2,055.0000
1000
$3.7000
$3,700.0000
2000
$3.4700
$6,940.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 38A, 10V |
| Power Dissipation (Max) | 96.1W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 275 V |
