: | IPD35N10S3L26ATMA2 |
---|---|
: | Single FETs, MOSFETs |
: | IR (Infineon Technologies) |
: | MOSFET_(75V 120 |
: | - |
: | Tape & Reel (TR) |
: | 0 |
: | 1 |
2500
$0.6800
$1,700.0000
5000
$0.6500
$3,250.0000
12500
$0.6200
$7,750.0000
TYPE | DESCRIPTION |
Mfr | IR (Infineon Technologies) |
Series | - |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V |
Power Dissipation (Max) | 71W (Tc) |
Vgs(th) (Max) @ Id | 2.4V @ 39µA |
Supplier Device Package | PG-TO252-3-11 |
Grade | Automotive |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
Qualification | AEC-Q101 |