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NXH800A100L4Q2F2P2G
  • image of IGBT Modules>NXH800A100L4Q2F2P2G
  • image of IGBT Modules>NXH800A100L4Q2F2P2G
Dash number NXH800A100L4Q2F2P2G
Product category IGBT Modules
Manufacturer Sanyo Semiconductor/onsemi
Type MASS MARKET GEN
Encapsulation -
Package Tray
Quantity 0
RoHS 1
Price: $122.8300
Stock:
Total

Quantity

Price

Total

1

$122.8300

$122.8300

10

$117.0200

$1,170.2000

36

$114.5300

$4,123.0800

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Product details
image of IGBT Modules>NXH800A100L4Q2F2P2G
image of IGBT Modules>NXH800A100L4Q2F2P2G
NXH800A100L4Q2F2P2G
Dash number
NXH800A100L4Q2F2P2G
Product category
IGBT Modules
Manufacturer
Sanyo Semiconductor/onsemi
Type
MASS MARKET GEN
Encapsulation
-
Package
Tray
Quantity
0
RoHS
1
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 400A
NTC ThermistorYes
Supplier Device Package51-PIM/Q2PACK (93x47)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)309 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Power - Max714 W
Current - Collector Cutoff (Max)20 µA
Input Capacitance (Cies) @ Vce49700 pF @ 20 V
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