| ： | PMXB65ENE,147 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | NXP Semiconductors |
| ： | NOW NEXPERIA PM |
| ： | - |
| ： | Bulk |
| ： | 2082 |
| ： | |
1402
$0.2100
$294.4200
| TYPE | DESCRIPTION |
| Mfr | NXP Semiconductors |
| Series | - |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 3.2A, 10V |
| Power Dissipation (Max) | 400mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN1010D-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 15 V |
