| ： | WNSC2D12650TJ |
|---|---|
| ： | Single Diodes |
| ： | WeEn Semiconductors Co., Ltd |
| ： | DIODE SIL CARBI |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 2985 |
| ： | |
1
$3.4000
$3.4000
10
$2.8500
$28.5000
100
$2.3100
$231.0000
500
$2.0500
$1,025.0000
1000
$1.7600
$1,760.0000
3000
$1.6500
$4,950.0000
6000
$1.5900
$9,540.0000
| TYPE | DESCRIPTION |
| Mfr | WeEn Semiconductors Co., Ltd |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
